Monte Carlo Simulations of the Electronic and Nuclear Stopping Powers of Light and Heavy Ions in Silicon Material

Abstract

The stopping power of a material, resulting from the passage of charged particles through it, is an important topic in the fields of applied and industrial sciences. The Stopping power is defined as the amount of energy lost by a particle per unit length of its path through the medium. The process of energy loss for a charged particle passing through the target material must be achieved with high accuracy through direct practical measurements, Monte Carlo simulations or through theoretical calculations. This research provides insight into the stopping powers, projected ranges, longitudinal straggling and lateral straggling of different ions (boron, indium, arsenic, antimony and phosphorus) with energies of 10 KeV to 10 MeV, in silicon target using simulations with the program packages SRIM. In this study, these ions were chosen because they are the most common dopants in the manufacture of silicon semi-conductors. The results of the current study would be used for further research in the field of doping of semiconductor material with light and heavy ions.